Structure of the Al0.27Ga0.73N/GaN diode under study. | Download Scientific Diagram
a) Forward I-V characteristics and (b) ideality factors of GaN p-n... | Download Scientific Diagram
Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal - ScienceDirect
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11
GaN-Based Schottky Diode | IntechOpen
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact | Scientific Reports
Cutting leakage in gallium nitride vertical diodes on silicon
Typical current-voltage characteristics of the Au/n-GaN diode at room... | Download Scientific Diagram
GaN-Based Schottky Diode | IntechOpen
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs) | HTML
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications: Journal of Vacuum Science & Technology B: Vol 34, No 2
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 - Advances in Engineering
Chinese team develops Kilovolt GaN diode - News
Electronics | Free Full-Text | Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy | HTML
Graphene-GaN Schottky diodes | SpringerLink
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes
Breakdown-induced conductive channel for III-nitride light-emitting devices | Scientific Reports
Panasonic claims 7.6kA/cm² for a GaN diode
Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications - ScienceDirect
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode | Semantic Scholar
